SOCS006C - AUGUST 1986 - REVISED DECEMBER 1991
The TC241 is a frame-transfer charge-coupled device (CCD) image sensor designed for use in single-chip B/W NTSC TV applications. The device is intended to replace a 2/3-inch vidicon tube in applications requiring small size, high reliability, and low cost.
The image-sensing area of the TC241 is configured into 244 lines with 780 elements in each line. Twenty-four elements are provided in each line for dark reference. The blooming protection incorporated into the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is a feature activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image- sensing element.
The sensor is designed to operate in an interlace mode, electronically displacing the image-sensing elements by one-half of a vertical line during the charge integration period in alternate fields, effectively increasing the vertical resolution and minimizing aliasing. The device can also be run as a 754 (H) by 244 (V) noninterlaced sensor with significant reduction in the dark signal.
A gated floating-diffusion detection structure with an automatic reset and voltage reference incorporated on-chip converts charge to signal voltage. A low-noise, two-stage, source-follower amplifier buffers the output and provides high output-drive capability.
The TC241 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking.
The TC241 is characterized for operation from -10°C to 45°C.
This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to SUB. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUTn to ADB during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
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