TM497BBK32H, TM497BBK32I 4194304 BY 32-BIT TM893CBK32H, TM893CBK32I 8388608 BY 32-BIT DYNAMIC RAM MODULES

SMMS675A - MARCH 1997 - REVISED APRIL 1997

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

• Organization
  • TM497BBK32H/I: 4194304 x 32
  • TM893CBK32H/I: 8388608 x 32
• Single 5-V Power Supply (±10% Tolerance)
• 72-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets
• TM497BBK32H/I - Uses Eight 16M-Bit Dynamic Random-Access Memory (DRAM) Devices in Plastic Small-Outline J-Lead (SOJ) Packages
• TM893CBK32H/I - Uses Sixteen 16M-Bit DRAMs in Plastic SOJ Packages
• Long Refresh Period 32 ms (2048 Cycles)
• All Inputs, Outputs, Clocks Fully TTL-Compatible
• 3-State Output
• Common CAS\ Control for Eight Common Data-In and Data-Out Lines in Four Blocks
• Enhanced Page Mode Operation With CAS\-Before-RAS\ (CBR), RAS\-Only, and Hidden Refresh
• Presence Detect
• Performance Ranges: ACCESS ACCESS ACCESS READ TIME TIME TIME OR t_RAC t_AA t_CAC WRITE CYCLE (MAX) (MAX) (MAX) (MIN)'497BBK32H/I-50 50 ns 25 ns 13 ns 90 ns'497BBK32H/I-60 60 ns 30 ns 15 ns 110 ns'497BBK32H/I-70 70 ns 35 ns 18 ns 130 ns '893CBK32H/I-50 50 ns 25 ns 13 ns 90 ns'893CBK32H/I-60 60 ns 30 ns 15 ns 110 ns'893CBK32H/I-70 70 ns 35 ns 18 ns 130 ns
• Low Power Dissipation
• Operating Free-Air Temperature Range 0°C to 70°C
• Gold-Tabbed Version Available: TM497BBK32H, TM893CBK32H
• Tin-Lead (Solder-) Tabbed Version Available: TM497BBK32I, TM893CBK32I

Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.

description

The TM497BBK32H/I is a 16M-byte dynamic random-access memory (DRAM) device organized as 4 × 4194304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight TMS417400ADJ, 4194304 × 4-bit DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. The TMS417400ADJ is described in the TMS417400A data sheet (literature number SMKS889).

The TM497BBK32H/I SIMM is available in the single-sided BK leadless module for use with sockets. The TM497BBK32H/I features RAS\ access times of 50, 60, and 70 ns. This device is characterized for operation from 0°C to 70°C.

The TM893CBK32H/I is a 32M-byte DRAM organized as 4 8388608 × 8 bits in a 72-pin leadless SIMM. The SIMM is composed of sixteen TMS417400ADJ, 4194304 × 4-bit DRAMs.

The TM893CBK32H/I SIMM is available in the double-sided BK leadless module for use with sockets. The TM893CBK32H/I features RAS\ access times of 50, 60, and 70 ns. This device is characterized for operation from 0°C to 70°C.

View more information about generic part numbers:TM497BBK32H, TM497BBK32I, TM893CBK32H, TM893CBK32I

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.

(c) Copyright 1998 Texas Instruments Incorporated. All rights reserved.
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