TM497FBK32H, TM497FBK32I 4194304 BY 32-BIT TM893GBK32H, TM893GBK32I 8388608 BY 32-BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES

SMMS674A - MARCH 1997 - REVISED SEPTEMBER 1997

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

• Organization
  • TM497FBK32H/I: 4194304 x 32
  • TM893GBK32H/I: 8388608 x 32
• Single 5-V Power Supply (±10% Tolerance)
• 72-Pin Single-In-Line Memory Module (SIMM) for Use With Sockets
• TM497FBK32H/I - Uses Eight 16M-Bit Dynamic Random-Access Memories (DRAMs) in Plastic Small-Outline J-Lead (SOJ) Packages
• TM893GBK32H/I - Uses Sixteen 16M-Bit DRAMs in Plastic SOJ Packages
• Long Refresh Period 32 ms (2048 Cycles)
• All Inputs, Outputs, Clocks Fully TTL-Compatible
• 3-State Output
• Common CAS\ Control for Eight Common Data-In and Data-Out Lines in Four Blocks
• Extended Data Out (EDO) Operation With CAS\-Before-RAS\ (CBR), RAS\-Only, and Hidden Refresh
• Presence Detect
• Performance Ranges: ACCESS ACCESS ACCESS EDO TIME TIME TIME CYCLE t_RAC t_AA t_CAC t_HPC (MAX) (MAX) (MAX) (MIN)'497FBK32H/I-50 50 ns 25 ns 13 ns 20 ns'497FBK32H/I-60 60 ns 30 ns 15 ns 25 ns'497FBK32H/I-70 70 ns 35 ns 18 ns 30 ns'893GBK32H/I-50 50 ns 25 ns 13 ns 20 ns'893GBK32H/I-60 60 ns 30 ns 15 ns 25 ns'893GBK32H/I-70 70 ns 35 ns 18 ns 30 ns
• Low Power Dissipation
• Operating Free-Air Temperature Range 0°C to 70°C
• Gold-Tabbed Version Available: TM497FBK32H, TM893GBK32H
• Tin-Lead (Solder-) Tabbed Version Available: TM497FBK32I, TM893GBK32I

Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.

description

The TM497FBK32H/I is a 16M-byte dynamic random-access memory (DRAM) module organized as four times 4194304 × 8 bits in a 72-pin leadless single-in-line memory module (SIMM). The SIMM is composed of eight TMS417409ADJ DRAMs, each in 24/26-lead plastic small-outline J-lead (SOJ) packages mounted on a substrate with decoupling capacitors. The TMS417409ADJ is described in the TMS416409A, TMS417409A data sheet (literature number SMKS893).

The TM497FBK32H/I SIMM is available in the single-sided BK leadless module for use with sockets. The TM497FBK32H/I features RAS\ access times of 50, 60, and 70 ns. This device is characterized for operation from 0°C to 70°C.

The TM893GBK32H/I is a 32M-byte DRAM organized as four times 8388608 × 8 bits in a 72-pin leadless SIMM. The SIMM is composed of sixteen TMS417409ADJ DRAMs.

The TM893GBK32H/I SIMM is available in the double-sided BK leadless module for use with sockets. The TM893GBK32H/I features RAS\ access times of 50, 60, and 70 ns. This device is characterized for operation from 0°C to 70°C.

View more information about generic part numbers:TM497FBK32H, TM497FBK32I, TM893GBK32H, TM893GBK32I

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.

(c) Copyright 1998 Texas Instruments Incorporated. All rights reserved.
Trademarks, Important Notice!