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SMMS508C - MARCH 1992 - REVISED JUNE 1995
features
- Organization... 4194304 × 8
- Single 5-V Power Supply (±10% Tolerance)
- 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets
- Utilizes Eight 4-Megabit DRAMs in Plastic Small-Outline J-Lead Packages (SOJs)
- Long Refresh Period 16 ms (1024 Cycles)
- All Inputs, Outputs, Clocks Fully TTL Compatible
- 3-State Output
- Performance Ranges:
- Common CAS\ Control for Eight Common Data-In and Data-Out Lines
- Low Power Dissipation
- Operating Free-Air Temperature Range 0°C to 70°C
description
description
The TM4100GAD8 is a dynamic random-access memory (DRAM) module organized as 4194304 × 8 bits in a 30-pin leadless single in-line memory module (SIMM).
The SIMM is composed of eight TMS44100DJ 4194304 × 1-bit DRAMs in 20/26-lead plastic small-outline J-lead packages (SOJ) mounted on a substrate with decoupling capacitors.
The TM4100GAD8 is available in the AD single-sided, leadless module for use with sockets.
The TM4100GAD8 is characterized for operation from 0°C to 70°C.
Title: 4 194 304 BY 8-BIT DRAM MODULE
Product Family: SIMM
Device Functionality: 4M(4MX8)
Orderable Devices: TM4100GAD8-60, TM4100GAD8-70
View the complete PDF datasheet: smms508c.pdf (98 K Bytes) (Requires Acrobat Reader 3.x)View more information about generic part numbers:TM4100GAD8
Go to the Engineering Design Center to locate information on other TI Semiconductor devices.




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