











TM4100EAD9 4194304 BY 9-BIT DYNAMIC RAM MODULE
SMMS419C - NOVEMBER 1991 - REVISED JUNE 1995
features
- Organization...4194304 × 9
- Single 5-V Power Supply (±10% Tolerance)
- 30-Pin Single In-Line Memory Module (SIMM) for Use With Sockets
- Utilizes Nine 4-Megabit Dynamic RAMs in Plastic Small-Outline J-Lead Packages (SOJs)
- Long Refresh Period 16 ms (1024 Cycles)
- All Inputs, Outputs, and Clocks Fully TTL Compatible
- 3-State Outputs
- Performance Ranges:
- Common CAS\ Control for Eight Common Data-In and Data-Out Lines
- Separate CAS\ Control for One Separate Pair of Data-In and Data-Out Lines
- Low Power Dissipation
- Operating Free-Air Temperature Range 0°C to 70°C
description
The TM4100EAD9 is a dynamic random-access memory module organized as 4194304 × 9 [bit nine (D9, Q9) is generally used for parity and is controlled by CAS9\] in a 30-pin leadless single in-line memory module (SIMM).
This module is composed of nine TMS44100DJ, 4194304 × 1-bit dynamic RAMs (DRAMs) each in a 20/26-lead plastic small-outline J-lead package (SOJ) mounted on a substrate with decoupling capacitors.
The TM4100EAD9 is characterized for operation from 0°C to 70°C and is available in the AD single-sided, leadless module for use with sockets.
Title: 4194 304 BY 9-BIT DRAM MODULE
Product Family: SIMM
Device Functionality: 4M(4MX9)
Orderable Devices: TM4100EAD9-60, TM4100EAD9-70
View the complete PDF datasheet: smms419c.pdf (117 K Bytes) (Requires Acrobat Reader 3.x)View more information about generic part numbers:TM4100EAD9
Go to the Engineering Design Center to locate information on other TI Semiconductor devices.




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