



SMMS137E - JANUARY 1991 - REVISEDJUNE 1995
Part numbers in this data sheet are for the gold-tabbed version; the information applies to both gold-tabbed and solder-tabbed versions.
The TM124MBK36B is a dynamic random-access memory (DRAM) organized as four times 1048576 × 9 (bit 9 is generally used for parity) in a 72-pin leadless single in-line memory module (SIMM). The SIMM is composed of eight TMS44400DJ, 1048576 × 4-bit DRAMs, each in 20/26-lead plastic small-outline J-lead packages (SOJs), and one TMS44460DJ, 1048576 × 4-bit Quad-CAS\ DRAM in a 24/26-lead plastic small-outline J-lead package (SOJ), mounted on a substrate with decoupling capacitors. Each TMS44400DJ and TMS44460DJ is described in the TMS44400 or TMS44460 data sheet, respectively.
The TM124MBK36B is available in the single-sided BK leadless module for use with sockets.
The TM124MBK36B features RAS\ access times of 60 ns, 70 ns, and 80 ns. This device is rated for operation from 0°C to 70°C.
The TM248NBK36B is a DRAM organized as four times 2097152 × 9 (bit 9 is generally used for parity) in a 72-pin leadless SIMM. The SIMM is composed of sixteen TMS44400DJ, 1048576 × 4-bit DRAMs, each in 20/26-lead plastic small-outline J-lead packages (SOJs), and two TMS44460DJ, 1048576 × 4-bit Quad-CAS\ DRAMs, each in a 24/26-lead plastic small-outline J-lead package (SOJ), mounted on a substrate with decoupling capacitors. Each TMS44400DJ and TMS44460DJ is described in the TMS44400 and TMS44460 data sheet, respectively.
View more information about generic part numbers:TM124MBK36B, TM124MBK36R, TM248NBK36B, TM248NBK36R
Go to the Engineering Design Center to locate information on other TI Semiconductor devices.



