TMS418169A, TMS428169A 1048576 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES

SMKS892C - AUGUST 1996 - REVISED SEPTEMBER 1997

features

This data sheet is applicable to TMS418169A and TMS428169A symbolized by Revision "E", and subsequent revisions as described in the device symbolization section.

• Organization...1048576 by 16 Bits
• Single 5-V Power Supply for TMS418169A (± 10% Tolerance)
• Single 3.3-V Power Supply for TMS428169A (± 0.3 V Tolerance)
• 1024-Cycle Refresh in 16 ms
• Performance Ranges:
• Extended-Data-Out (EDO) Operation
• xCAS\-Before-RAS\ (xCBR) Refresh
• 3-State Unlatched Output
• Low Power Dissipation
• High-Reliability Plastic 42-Lead 400-Mil-Wide Surface-Mount Small-Outline J-Lead (SOJ) Package (DZ Suffix) and 44/50-Lead Surface-Mount Thin Small-Outline Package (TSOP) (DGE Suffix)
• Ambient Temperature Range 0°C to 70°C

description

The TMS418169A and TMS428169A are 16777216-bit dynamic random-access memory (DRAM) devices organized as 1048576 words of 16 bits each. They employ state-of-the-art technology for high performance, reliability, and low power at low cost.

The TMS418169A features maximum RAS\ access times of 50-, 60-, and 70 ns, and the TMS428169A features maximum RAS\ access

times of 60- and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS418169A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). The TMS428169A is offered in a 44/50-lead plastic surface-mount TSOP (DGE suffix). These packages are designed for operation from 0°C to 70°C.

View more information about generic part numbers:TMS418169A, TMS428169A

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