



SMKS891C - AUGUST 1996 - REVISED OCTOBER 1997
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
This data sheet is applicable to TMS418160As symbolized by Revision "E" and subsequent revisions as described in the device symbolization section.
The TMS418160A is a 16777216-bit dynamic random-access memory (DRAM) device organized as 1048576 words of 16 bits. It employs state-of-the-art technology for high performance, reliability, and low power at low cost.
This device features maximum RAS\ access times of 50-, 60-, and 70 ns. All address and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.
The TMS418160A is offered in a 42-lead plastic surface-mount SOJ package (DZ suffix). This package is designed for operation from 0° to 70°C.
View more information about generic part numbers:TMS418160A
Go to the Engineering Design Center to locate information on other TI Semiconductor devices.



