TMS417800A 2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY

SMKS888B - AUGUST 1996 - REVISED SEPTEMBER 1997

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features

This data sheet is applicable to all TMS417800As symbolized by Revision "E" and subsequent revisions as described in the device symbolization section.

• Organization...2097152 × 8
• Single 5-V Power Supply (± 10% Tolerance)
• 2048-Cycle Refresh in 32 ms
• Performance Ranges:
• Enhanced Page-Mode Operation With CAS\-Before-RAS\ (CBR) Refresh
• High-Impedance State Unlatched Output
• Low Power Dissipation
• High-Reliability Plastic 28-Lead 400-Mil-Wide Surface-Mount Small Outline J-Lead (SOJ) Package (DZ Suffix)
• Ambient Temperature Range 0°C to 70°C

description

The TMS417800A is a 16777216-bit dynamic random-access memory (DRAM) device organized as 2097152 words of eight bits. It employs TI's state-of-the-art technology for high performance, reliability, and low power.

This device features maximum RAS\ access times of 50-, 60-, and 70 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS417800A is offered in a 28-lead plastic surface-mount SOJ package (DZ suffix). This package is designed for operation from 0°C to 70°C.

View more information about generic part numbers:TMS417800A

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.

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