TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS

SMKS886C - MAY1995-REVISED MARCH 1996

features

Organization...1048576 Words by 16 Bits
Single 5-V Power Supply
Performance Ranges:
Extended-Data-Out (EDO) Operation
xCAS\-Before-RAS\ (xCBR) Refresh
RAS\-Only Refresh
- 1024-Cycle Refresh in 16 ms (TMS418169)
- 4096-Cycle Refresh in 64 ms (TMS416169)
3-State Unlatched Output
High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package
Operating Free-Air Temperature Range 0°C to 70°C
Texas Instruments Enhanced Performance Implanted CMOS (EPIC^TM) Process

description

EPIC is a trademark of Texas Instruments Incorporated.

The TMS418169 and the TMS416169 are high-speed, 16777216-bit dynamic random-access memories (DRAMs) organized as 1048576 words of 16 bits each. Both devices employ state-of-the-art EPIC technology for high performance, reliability, and low power at low cost.

These devices feature maximum RAS\ access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS416169 and TMS418169 are offered in a 42-lead plastic surface-mount SOJ (DZ suffix) package. The package is characterized for operation from 0°C to 70°C.

Title: 1 048 576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS
Product Family: DRAM
Device Functionality: 16M(1MX16),EDO
Orderable Devices: TMS416169, TMS418169-60DZ, TMS418169-70DZ

View the complete PDF datasheet: smks886c.pdf (397 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:TMS416169, TMS418169

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.