TMS416160, TMS416160P, TMS418160, TMS418160P TMS426160, TMS426160P, TMS428160, TMS428160P 1048576-WORD BY 16-BIT HIGH-SPEED DRAMS

SMKS160C - MAY 1995-REVISED NOVEMBER 1995

features

• Organization...1048576 × 16
• Single Power Supply (5 V or 3.3 V)
• Performance Ranges:
• Enhanced Page-Mode Operation With CAS\-Before-RAS\ (CBR) Refresh
• Long Refresh Period and Self-Refresh Option (TMS4xx160P)
• 3-State Unlatched Output
• Low Power Dissipation
• High-Reliability Plastic 42-Lead (DZ Suffix) 400-Mil-Wide Surface-Mount (SOJ) Package and 44/50-Lead (DGE Suffix) Surface-Mount Thin Small-Outline Package (TSOP)
• Operating Free-Air Temperature Range 0°C to 70°C
• Fabricated Using the Texas Instruments Enhanced Performance Implanted CMOS (EPIC^TM) Technology

description

EPIC is a trademark of Texas Instruments Incorporated.

The TMS4xx160 series is a set of high-speed, 16777216-bit dynamic random-access memories (DRAMs) organized as 1048576 words of 16 bits each. The TMS4xx160P series is a similar set of high-speed, low-power, self-refresh,

16777216-bit DRAMs organized as 1048576 words of 16 bits each. Both sets employ state-of-the-art enhanced performance implanted CMOS (EPIC^TM) technology for high performance, reliability, and low power at low cost.

These devices feature maximum RAS\ access times of 60 ns, 70 ns, and 80 ns. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS4xx160 and TMS4xx160P are offered in a 44/50-lead plastic surface-mount TSOP (DGE suffix) and a 42-lead plastic surface-mount SOJ (DZ suffix) package. These packages are characterized for operation from 0°C to 70°C.

View more information about generic part numbers:TMS416160, TMS418160

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.

(c) Copyright 1998 Texas Instruments Incorporated. All rights reserved.
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