TMS28F008Axy,TMS28F800Axy 1048576 BY 8-BIT/524288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES

SMJS851A - NOVEMBER 1997 - REVISED MARCH 1998

features

• Organization... 1048576 By 8 Bits 524288 By 16 Bits
• Array-Blocking Architecture
  • Two 8K-Byte/4K-Word Parameter Blocks
  • One 96K-Byte/48K-Word Main Block
  • Seven 128K-Byte/64K-Word Main Blocks
  • One 16K-Byte/8K-Word Protected Boot Block
  • Top or Bottom Boot Locations
• All Inputs/Outputs TTL-Compatible
• Maximum Access/Minimum Cycle Time

  5-V V_CC 3-V V_CC '28F008Axy70 70 ns 100 ns '28F008Axy80 80 ns 120 ns '28F800Axy70 70 ns 100 ns '28F800Axy80 80 ns 120 ns (See Table 1 for V_CC/V_PP Voltage Configuration)

• 100000- and 10000-Program/Erase Cycle Versions
• Three Temperature Ranges
  • Commercial...0°C to 70°C
  • Extended...- 40°C to 85°C
  • Automotive...- 40°C to 125°C
• Embedded Program/Erase Algorithms
  • Automated Byte Programming
  • Automated Word Programming
  • Automated Block Erase
  • Erase Suspend/Erase Resume
• Automatic Power-Saving Mode
• JEDEC Standards Compatible
  • Compatible With JEDEC Byte/Word Pinouts
  • Compatible With JEDEC EEPROM Command Set
• Fully Automated On-Chip Erase and Byte/Word Program Operations
• Package Options
  • 44-Pin Plastic Small-Outline Package (PSOP) (DBJ Suffix)
  • 40-Pin Thin Small-Outline Package (TSOP) (DCD Suffix)
  • 48-Pin TSOP (DCD Suffix)
  • 48-Ball Micro Ball Grid Array (uBGA^TM) available
• Low Power Dissipation (V_CC = 5.5 V)
  • Active Write...330 mW (Byte Write)
  • Active Read...220 mW (Byte Read)
  • Active Write...330 mW (Word Write)
  • Active Read...275 mW (Word Read)
  • Block Erase...330 mW
  • Standby...0.55 mW (CMOS-Input Levels)
  • Deep Power-Down Mode...0.044 mW
• Write-Protection for Boot Block
• Industry Standard Command-State Machine (CSM)
  • Erase Suspend/Resume
  • Algorithm-Selection Identifier
• Flexible V_PP/Supply Voltage Combination

  uBGA is a trademark of Tessera, Inc.

description

The TMS28F800Axy is a 8388608-bit, boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F800Axy is organized in a blocked architecture consisting of:

• One 16K-byte/8K-word protected boot block
• Two 8K-byte/4K-word parameter blocks
• One 96K-byte/48K-word main block
• Seven 128K-byte/64K-word main blocks

The device can be ordered in four different voltage configurations (see Table 1). Operation as a 1024K-byte (8-bit) or a 512K-word (16-bit) organization is user-definable.

Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM), simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine progress of program/erase tasks. The device features user-selectable block erasure.

The TMS28F800AEy configuration allows the user to perform memory reads using 2.7-3.6-V V_CC and 5-V V_CC for optimum power consumption. Erasing or programming the device can be accomplished with V_PP = 3 V, 5 V, or 12-V. This configuration is offered in the commercial temperature range (0°C to 70°C) and the extended temperature range (-40°C to 85°C). Also, TMS28F800ASy offers V_CC = 3 - 3.6 V and V_CC = 5 V for optimum power consumption. The TMS28F800ALy configuration allows performance of memory reads using V_CC = 3.0 - 3.6 V for optimum power consumption. The TMS28F800AVy configuration allows performance of memory reads using V_CC = 2.7-3.6 V for optimum power consumption.

The TMS28F800AZy configuration offers a 5-V memory read with a 3-V/5-V/12-V program and erase. This configuration is offered in three temperature ranges: 0°C to 70°C, - 40°C to 85°C, - 40°C to 125°C.

The TMS28F800Axy is offered in a 44-pin plastic small-outline package (PSOP) and a 48-pin thin small-outline package (TSOP) organized as 16-bit or 8-bit.

The TMS28F008 is functionally equivalent to the 'F800 except that it is organized only as a 8-bit configuration, and it is offered only in a 40-pin TSOP.

View more information about generic part numbers:TMS28F008AEB, TMS28F008AET, TMS28F008ALB, TMS28F008ALT, TMS28F008ASB, TMS28F008AST, TMS28F008AVB, TMS28F008AVT, TMS28F008AZB, TMS28F008AZT, TMS28F800AEB, TMS28F800AET, TMS28F800ALB, TMS28F800ALT, TMS28F800ASB, TMS28F800AST, TMS28F800AVB, TMS28F800AVT, TMS28F800AZB, TMS28F800AZT

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.

(c) Copyright 1998 Texas Instruments Incorporated. All rights reserved.
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