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Data Sheet Abstract

TMS29F002RT, TMS29F002RB 262144 BY 8-BIT FLASH MEMORIES

SMJS849A - MARCH 1997 - REVISED NOVEMBER 1997


Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

description

The is a , single-supply, programmable read-only memory device that can be electrically erased and reprogrammed. This device is organized as , divided into sectors:

Any combination of sectors can be marked as read-only or erased. Full-chip erasure is also supported.

Sector data protection is afforded by methods that can disable any combination of sectors from write or read operations using standard programming equipment. An on-chip state machine provides an on-board algorithm that automatically pre-programs and erases any sector before it automatically programs and verifies program data at any specified address. The command set is compatible with that of the Joint Electronic Device Engineering Council (JEDEC) standards and is compatible with the JEDEC 2M-bit electrically erasable, programmable read-only memory (EEPROM) command set. A suspend/resume feature allows access to unaltered memory blocks during a section-erase operation. All outputs of this device are TTL-compatible. Additionally, an erase/suspend/resume feature supports reading data from, or programming data to, a sector that is not being erased.

Device operations are selected by writing JEDEC-standard commands into the command register using standard microprocessor write timings. The command register acts as an input to an internal-state machine which interprets the commands, controls the erase and programming operations, outputs the status of the device, outputs the data stored in the device, and outputs the device algorithm-selection code. On initial power up, the device defaults to the read mode. A hardware-reset pin initializes the internal-state machine to the read operation.

The device has low power dissipation with a 40-mA active read for the byte mode, 60-mA typical program/erase current mode, and less than 100-uA standby current with a 5-uA deep-power-down mode. These devices are offered with 70- and 80-ns access times. Table 1 and Table 2 show the sector-address ranges. The is offered in a 32-pin plastic leaded chip carrier (PLCC)(FM suffix).


Title: 262144 BY 8-BIT FLASH MEMORIES
Product Family: FLASH
Device Functionality: 2M(256KX8), TOP BOOT-BLOCK, SECTOR DATA PROTECTION, FULL CHIP ERASE

View the complete PDF datasheet: smjs849a.pdf (482 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:TMS29F002RB, TMS29F002RT

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