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Data Sheet Abstract

TMS29F010 131072 BY 8-BIT FLASH MEMORY

SMJS840 - NOVEMBER 1997


Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

description

The TMS29F010 is a 131072 by 8-bit (1048576-bit), 5-V single-supply, programmable read-only memory device that can be electrically erased and reprogrammed. This device is organized as eight independent 16K-byte sectors and is offered with access times between 70 and 120 ns.

An on-chip state machine controls the program and erase operations. The embedded byte-program and sector/chip-erase functions are fully automatic. The command set is compatible with that of JEDEC 1M-bit EEPROMs. Data-protection of any sector combination is accomplished using a hardware sector-protection feature.

Device operations are selected by writing JEDEC-standard commands into the command register using standard microprocessor write timings. The command register acts as an input to an internal-state machine that interprets the commands, controls the erase and programming operations, outputs the status of the device, outputs data stored in the device, and outputs the device algorithm-selection code. On initial power-up operation, the device defaults to the read mode.

The TMS29F010 is offered in a 32-pin plastic leaded chip carrier (FM suffix) using 1.27-mm (50-mil) lead pitch.


Title: 131072 BY 8-BIT FLASH MEMORY
Product Family: FLASH
Device Functionality: 1M(128KX8), SECTOR ERASE, EEPROM COMMANDS, SECTOR PROTECT
Orderable Devices: TMS29F010-12C5FME, TMS29F010-12C5FML, TMS29F010-70C5FME, TMS29F010-70C5FML, TMS29F010-90C5FME, TMS29F010-90C5FML

View the complete PDF datasheet: smjs840.pdf (419 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:TMS29F010

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