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Data Sheet Abstract

TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY

SMJS833 - NOVEMBER 1997


Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

description

The TMS28F033 is the first synchronous nonvolatile flash memory device to offer a configurable burst interface to 16/32-bit microprocessors and microcontrollers operating at frequencies up to 40 MHz.

The TMS28F033 contains 4M bits of main memory that is user-configurable as either three or four independently erasable blocks. In addition to the main memory array, there is a protected overlay memory block that is normally hidden from the memory address map. The following table shows the three- and four-block main-memory-array configurations for both 16-bit and 32-bit data bus widths.

Embedded program and block-erase functions are fully automated by an on-chip write state machine (WSM), which simplifies these operations and relieves the system microcontroller of these secondary tasks. WSM status can be monitored by the on-chip status register to determine the progress of program/erase tasks.

The TMS28F033 flash memory requires 12 V for erasure and programming, and 5 V for memory-array access while interfacing with either a 3.3-V or 5-V bus.

The TMS28F033 flash memory is fabricated using CMOS technology and is packaged in an 80-pin plastic quad flatpack (PQFP) (PAF suffix).


Title: 4194304-BIT SYNCHRONOUS FLASH MEMORY
Product Family: FLASH
Device Functionality: 4M(256KX16/128KX32), SECTOR ERASE, OVERLAY BLOCK, SYNCHRONOUS BURST READ

View the complete PDF datasheet: smjs833.pdf (806 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:TMS28F033

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