TMS28F002Axy, TMS28F200Axy 262144 BY 8-BIT/131072 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES

SMJS826D - JANUARY 1996 - REVISED SEPTEMBER 1997

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

• Organization... 262144 by 8 bits 131072 by 16 bits
• Array-Blocking Architecture
  • One 16K-Byte Protected Boot Block
  • Two 8K-Byte Parameter Blocks
  • One 96K-Byte Main Block
  • One 128K-Byte Main Block
  • Top or Bottom Boot Locations
• '28F200Axy Offers a User-Defined 8-Bit (Byte) or 16-Bit (Word) Organization
• '28F002Axy Offers Only the 8-Bit (Byte) Organization
• Maximum Access/Minimum Cycle Time
  • Commercial and Extended

5-V V_CC ± 10% or 3.3-V V_CC ± 0.3 V 5 V 3.3 V '28F002Axy/200Axy60 60 ns 110 ns '28F002Axy/200Axy70 70 ns 130 ns '28F002Axy/200Axy80 80 ns 150 ns

• Automotive

5-V V_CC ± 10% '28F200Axy70 70 ns '28F200Axy80 80 ns '28F200Axy90 90 ns

(x=S, E, F, Z, or M Depending on V_CC/V_PP Voltage Configuration) (y=T for Top or B for Bottom Boot-Block Configuration)

• 100000- and 10000-Program/Erase-Cycle Versions
• Three Temperature Ranges
  • Commercial...0°C to 70°C
  • Extended...- 40°C to 85°C
  • Automotive...- 40°C to 125°C
• Industry Standard Packages Offered in
  • 40-pin Thin Small-Outline Package (TSOP)
  • 44-pin Plastic Small-Outline Package (PSOP)
  • 48-pin TSOP
• Low Power Dissipation (V_CC = 5.5 V)
  • Active Read...330 mW (Byte-Read)
  • Active Write...248 mW (Byte-Write)
  • Active Read...330 mW (Word-Read)
  • Active Write...248 mW (Word-Write)
  • Block-Erase...165 mW
  • Standby...0.72 mW (CMOS-Input Levels)

• Fully Automated On-Chip Erase and Word/Byte Program Operations
• Write-Protection for Boot Block
• Industry Standard Command-State Machine (CSM)
  • Erase Suspend/Resume
  • Algorithm-Selection Identifier
• Five Different Combinations of Supply Voltages Offered
• All Inputs/Outputs TTL-Compatible

description

The TMS28F200Axy is a 262144 by 8-bit/131072 by-16 bit (2097152-bit), boot-block flash memory that can be electrically block-erased and reprogrammed. The TMS28F200Axy is organized in a blocked architecture consisting of:

• One 16K-byte protected boot block
• Two 8K-byte parameter blocks
• One 96K-byte main block
• One 128K-byte main block

The device can be ordered in five different voltage configurations (see Table 1). Operation as a 256K-byte (8-bit) or a 128K-word (16-bit) organization is user-definable.

The TMS28F002Axy is offered in a 256K-byte organization only. The operation for this device is the same as the TMS28F200Axy and is offered in the same voltage configurations. TMS28F002Axy can be substituted for the byte-wide TMS28F200Axy, with the latter being the generic name for this device family.

Embedded program and block-erase functions are fully automated by the on-chip write-state machine (WSM), thereby simplifying these operations and relieving the system microcontroller of these secondary tasks. WSM status can be monitored by an on-chip status register to determine the progress of program/erase tasks. The device features user-selectable block-erasure.

The configurations are as follow:

• The TMS28F002ASy and the TMS28F200ASy configurations have the auto-select feature that allows alternative read and program/erase voltages. Memory reads can be performed using 3.3-V V_CC for optimum power consumption or at 5-V V_CC, for device performance. Erasing or programming the device can be accomplished with 5-V V_PP, which eliminates having to use a 12-V source and/or in-system voltage converters. Alternatively, 12-V V_PP operation exists for systems that already have a 12-V power supply, which provides faster programming and erasing times. These configurations are offered in two different temperature ranges: 0°C to 70°C and - 40°C to 85°C.
• The TMS28F002AEy and the TMS28F200AEy configurations offer the auto-select feature of the TMS28F200ASy with an extended V_CC to a low 2.7-V to 3.6-V range (3-V nominal). Memory reads can be performed using a 3-V V_CC, allowing for more efficient power consumption than the 'ASy device.
• The TMS28F002AMy and TMS28F200AMy configurations offer a 3-V or 5-V memory read with a 12-V program and erase. These configurations are intended for low 3.3-V reads and the fast programming offered with the12-V V_PP and 5-V V_CC. These configurations are offered in two different temperature ranges: 0°C to 70°C and - 40°C to 85°C.
• The TMS28F002AFy and TMS28F200AFy configurations offer a 5-V memory read with a 5-V or 12-V program and erase. These configurations are intended for systems using a single 5-V power supply. The configurations are offered in three temperature ranges: 0°C to 70°C, - 40°C to 85°C, and - 40°C to 125°C.
• The TMS28F002AZy and TMS28F200AZy configurations offer a 5-V memory read with a 12-V program and a 12-V erase for fast programming and erasing times. These configurations are offered in three temperature ranges: 0°C to 70°C,- 40°C to 85°C, and - 40°C to 125°C.

All configurations of the TMS28F200Axy are offered in the 44-pin plastic small-outline package (PSOP) and the 48-pin thin small-outline package (TSOP). The TMS28F002Axy is offered in a 40-pin TSOP only. Both the 40-pin and 48-pin TSOP are offered for the 0°C to 70°C and - 40°C to 85°C temperature ranges only.

View more information about generic part numbers:TMS28F002AEB, TMS28F002AET, TMS28F002AFB, TMS28F002AFT, TMS28F002AMB, TMS28F002AMT, TMS28F002ASB, TMS28F002AST, TMS28F002AZB, TMS28F002AZT, TMS28F200AEB, TMS28F200AET, TMS28F200AFB, TMS28F200AFT, TMS28F200AMB, TMS28F200AMT, TMS28F200ASB, TMS28F200AST, TMS28F200AZB, TMS28F200AZT

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