TMS28F010B 131072 BY 8-BIT FLASH MEMORY

SMJS824B - MAY 1995 - REVISED AUGUST 1997

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

• Organization . . . 131072 by 8 Bits
• Pin Compatible With Existing 1-Megabit EPROMs
• V_CC Tolerance ±10%
• All Inputs/Outputs TTL Compatible
• Maximum Access/Minimum Cycle Time
• '28F010B-90 90 ns '28F010B-10 100 ns '28F010B-12 120 ns '28F010B-15 150 ns
• Industry-Standard Programming Algorithm
• PEP4 Version Available With 168-Hour Burn-In, and Choice of Operating Temperature Ranges
• 100000 and 10000 Program/Erase-Cycle Versions Available
• Latchup Immunity of 250 mA on All Input and Output Lines
• Low Power Dissipation (V_CC = 5.5 V) - Active Write...55 mW - Active Read...165 mW - Electrical Erase...82.5 mW - Standby...0.55 mW (CMOS-Input Levels)
• Automotive Temperature Range - 40°C to 125°C

description

The TMS28F010B is a 131072 by 8 bit (1048576-bit), programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 100000 and 10000 program/erase-endurance-cycle versions.

The TMS28F010B Flash Memory is offered in a 32-lead plastic leaded chip-carrier package (shown above) using 1,25-mm (50-mil) lead spacing (FM suffix), a 32-lead thin small-outline package (DD suffix), and a reverse pinout TSOP package (DU suffix)both shown on the following page.

View more information about generic part numbers:TMS28F010B

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.

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