TMS465169, TMS465169P 4194304 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES

SMHS566B - JUNE 1997 - REVISED APRIL 1998

features

• Organization...4194304 by 16 Bits
• Single 3.3-V Power Supply (± 0.3 V Tolerance)
• Performance Ranges:

  ACCESS ACCESS ACCESS EDO

  TIME TIME TIME CYCLE

  t_RAC t_CAC t_AA t_HPC

  MAX MAX MAX MIN

  '46x169/P-50 50 ns 13 ns 25 ns 20 ns

  '46x169/P-60 60 ns 15 ns 30 ns 25 ns

• Extended-Data-Out (EDO) Operation
• xCAS\-Before-RAS\ (xCBR) Refresh
• Long Refresh Period and Self-Refresh Option (TMS46x169P)
• 3-State Unlatched Output
• Low Power Dissipation
• High-Reliability Plastic 50-Lead 400-Mil-Wide Surface-Mount Thin Small-Outline Package (TSOP) (DGE Suffix)
• Operating Free-Air Temperature Range 0°C to 70°C

  AVAILABLE OPTIONS

  DEVICE	POWER SUPPLY	SELF- REFRESH, BATTERY BACKUP	REFRESH CYCLES
  TMS465169	3.3 V	--	4096 in 64 ms
  TMS465169P	3.3 V	Yes	4096 in 128 ms

description

The and TMS465169 is a high-speed, 67108864-bit dynamic random-access memory (DRAM) device organized as 4194304 words of 16 bits. The TMS465169P is similar DRAM but includes a long refresh period and a self-refresh option. Both employ state-of-the-art technology for high performance, reliability, and low power at low cost.

These devices feature maximum RAS\ access times of 50 and 60 ns. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS465169/P is offered in a 50-lead plastic surface-mount TSOP (DGE suffix). This package is designed for operation from 0°C to 70°C.

View more information about generic part numbers:TMS465169, TMS465169P

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.

(c) Copyright 1998 Texas Instruments Incorporated. All rights reserved.
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