TMS44409, TMS44409P 1048576-WORD BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY

SMHS563 - JULY1995

features

Organization...1048576 × 4
Single 5-V Power Supply (±10% Tolerance)
Performance Ranges:
Extended Data Out (EDO) Operation
CAS\-Before-RAS\ (CBR) Refresh
3-State Unlatched Output
Low Power Dissipation
All Inputs/Outputs and Clocks are TTL-Compatible
Long Refresh Period
- 1 024 Cycle Refresh in 16 ns (max)
- 128 ms on Low Power, Self-Refresh Version (TMS44409P Only)
Operating Free-Air Temperature Range 0°C to 70°C

description

The TMS44409 is a high-speed 4194304-bit dynamic random-access memory (DRAM) organized as 1048576 words of four bits each. This device features maximum RAS\ access times of 60 ns, 70 ns and 80 ns. Maximum power consumption is as low as 385 mW operating and 6 mW standby. All inputs and outputs, including

clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS44409P is a high-speed, low-power, self-refresh version of the TMS44409 DRAM.

All versions of the TMS44409/P are offered in a 300-mil 20/26 J-lead plastic surface-mount SOJ package (DJ suffix) and a 20/26-lead plastic small outline package (DGA suffix). These devices are characterized for operation from 0°C to 70°C.

Title: 1 048 576-WORD BY 4-BIT DRAM
Product Family: DRAM
Device Functionality: 4M(1MX4),EDO
Orderable Devices: TMS44409-60DJ, TMS44409-70DJ

View the complete PDF datasheet: smhs563.pdf (390 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:TMS44409

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