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Data Sheet Abstract

TMS45160, TMS45160P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES

SMHS160D - AUGUST 1992 - REVISED JUNE 1995


features

This data sheet is applicable to all TMS45160/Ps symbolized with Revision "D" and subsequent revisions as described on page 21.

description

EPIC is a trademark of Texas Instruments Incorporated.

The TMS45160 series are high-speed, 4194304-bit dynamic random-access memories organized as 262144 words of 16 bits each. The TMS45160P series are high-speed, low-power, self-refresh 4194304-bit dynamic random-access memories organized as 262144 words of 16 bits each. They employ state-of-the-art EPICTM (Enhanced Performance Implanted CMOS) technology for high performance, reliability, and low power at low cost.

These devices feature maximum RAS\ access times of 60 ns, 70 ns, and 80 ns. Maximum power dissipation is as low as 770 mW operating and 11 mW standby on 80-ns devices. All inputs and outputs, including clocks, are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The TMS45160 and TMS45160P are each offered in a 40-lead plastic surface-mount SOJ package (DZ suffix) and a 40/44-lead plastic surface-mount small-outline (TSOP) package (DGE suffix). These packages are characterized for operation from 0°C to 70°C.


Title: 262 144-WORD BY 16-BIT HIGH-SPEED DRAM
Product Family: DRAM
Device Functionality: 4M(256KX16),PAGE MODE
Orderable Devices: TMS45160-60DZ, TMS45160-70DZ

View the complete PDF datasheet: smhs160d.pdf (336 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:TMS45160

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