











TRF7003 MOSFET POWER AMPLIFIER
SLWS058B - APRIL 1997 - REVISED MARCH 1998
features
- Wide Operating Frequency Range up to 1000 MHz
- High Output Power:
- Typical Value of 32.5 dBm at 4.8 V
- and 900 MHz
- Typical Value of 29 dBm at 3.6 V
- and 900 MHz
- High Gain:
- Typical Value of 9.5 dB at 4.8 V, and
- 900 MHz at 32.5-dBm Output Power
- High Power-Added Efficiency (PAE):
- Typical Value of 50% at 32.5-dBm
- Output Power
- Low Cost
- Extremely Rugged:
- Sustains 20:1 Load Mismatch
- Suitable for Various Wireless Applications
- Low Leakage <1 uA
- SOT-89 Plastic Power Package
description
The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS
RFMOS is a trademark of Texas Instruments Incorporated.TM process. It is housed in a SOT-89 (PK) plastic power package. The TRF7003 is intended for global systems for mobile communications (GSM) power amplifier applications. The TRF7003 is a rugged, low-cost device that operates from a single-polarity positive power supply and has low leakage current. Typical power output at 900 MHz is 32.5 dBm, with an associated power gain of 9.5 dB and 50-percent power-added efficiency (PAE).
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)† Drain-source voltage, VDS ... 20 V Gate-source voltage, VGS ... 7 V Continuous drain current, ID ... 2 A Junction temperature, TJ max ... 150°C Thermal resistance, junction to case, RΘJC (See Note 1) ... 10°C/W Total device power dissipation @ TC = 25°C ... 12.5 W Derate above 25 °C ... 100 mW/°C Operating free-air temperature range,TA ... -40°C to 85°C Storage temperature range, Tstg ... -65°C to 100°C† Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: With infinite heatsink and no air flow
Title: MOSFET POWER AMPLIFIER
Product Family: RF FOR PERSONAL COMMUNICATIONS
Device Functionality: OUTPUT AMPLIFIER STAGE FOR GSM/AMPS AND CDMA CELULLAR APPLICATIONS
View the complete PDF datasheet: slws058b.pdf (133 K Bytes) (Requires Acrobat Reader 3.x)View more information about generic part numbers:TRF7003
Go to the Engineering Design Center to locate information on other TI Semiconductor devices.




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