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Data Sheet Abstract

TRF7003 MOSFET POWER AMPLIFIER

SLWS058B - APRIL 1997 - REVISED MARCH 1998


features

description

The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET) manufactured using the Texas Instruments RFMOS

RFMOS is a trademark of Texas Instruments Incorporated.TM process. It is housed in a SOT-89 (PK) plastic power package. The TRF7003 is intended for global systems for mobile communications (GSM) power amplifier applications. The TRF7003 is a rugged, low-cost device that operates from a single-polarity positive power supply and has low leakage current. Typical power output at 900 MHz is 32.5 dBm, with an associated power gain of 9.5 dB and 50-percent power-added efficiency (PAE).

absolute maximum ratings over operating free-air temperature range (unless otherwise noted) Drain-source voltage, VDS ... 20 V Gate-source voltage, VGS ... 7 V Continuous drain current, ID ... 2 A Junction temperature, TJ max ... 150°C Thermal resistance, junction to case, RΘJC (See Note 1) ... 10°C/W Total device power dissipation @ TC = 25°C ... 12.5 W Derate above 25 °C ... 100 mW/°C Operating free-air temperature range,TA ... -40°C to 85°C Storage temperature range, Tstg ... -65°C to 100°C

Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: With infinite heatsink and no air flow


Title: MOSFET POWER AMPLIFIER
Product Family: RF FOR PERSONAL COMMUNICATIONS
Device Functionality: OUTPUT AMPLIFIER STAGE FOR GSM/AMPS AND CDMA CELULLAR APPLICATIONS

View the complete PDF datasheet: slws058b.pdf (133 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:TRF7003

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