TPS1110, TPS1110Y SINGLE P-CHANNEL LOGIC-LEVEL MOSFETS

SLVS100B - OCTOBER 1994 - REVISED JANUARY 1998

features

• Low r_DS(on)...65 m Typ at V_GS = -4.5 V
• High Current Capability 6 A at V_GS = -4.5 V
• Logic-Level Gate Drive (3 V Compatible) V_GS(th) = -0.9 V Max
• Low Drain-Source Leakage Current <100 nA From 25°C to 75°C at V_DS = -6 V
• Fast Switching...5.8 ns Typ t_d(on)
• Small-Outline Surface-Mount Power Package

description

The TPS1110 is a single, low-r_DS(on), P-channel enhancement-mode power MOS transistor. The device features extremely low-r_DS(on) values coupled with logic-level gate-drive capability and very low drain-source leakage current. With a maximum V_GS(th) of -0.9 V and an I_DSS of only -100 nA, the TPS1110 is the ideal high-side switch for low-voltage, portable battery-management power-distribution systems where maximizing battery life is an important concern. The thermal performance of the 8-pin small-outline (D) package has been greatly enhanced over the standard 8-pin SOIC, further making the TPS1110 ideally suited for many power applications. For compatibility with existing designs, the TPS1110 has a pinout common with other P-channel MOSFETs in small-outline integrated circuit (SOIC) packages. The TPS1110 is characterized for an operating junction temperature range, T_J, from -40°C to 150°C. The D package is available packaged in standard sleeves or in taped and reeled formats. When ordering the tape-and-reel format, add an R suffix to the device type number (e.g., TPS1110DR).

View more information about generic part numbers:TPS1110

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