SLOS157A - JUNE1996 - REVISED JANUARY 1997
Hz\ Typ at f = 1 kHzAdvanced LinCMOS is a trademark of Texas Instruments Incorporated.
The TLV2221 is a single operational amplifier manufactured using the Texas Instruments Advanced LinCMOSTM process. This device is optimized and fully specified for single-supply 3-V and 5-V operation. For this low-voltage operation combined with micropower dissipation levels, the input noise voltage performance has been dramatically improved using optimized design techniques for CMOS-type amplifiers. Another added benefit is that this amplifier exhibits rail-to-rail output swing. The output dynamic range can be extended using the TLV2221 with loads referenced midway between the rails. The common-mode input voltage range is wider than typical standard CMOS-type amplifiers. To take advantage of this improvement in performance and to make this device available for a wider range of applications, VICR is specified with a larger maximum input offset voltage test limit of ± 5 mV, allowing a minimum of 0-V to 2-V common-mode input voltage range for a 3-V power supply.
The Advanced LinCMOS process uses a silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. This technology also makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices.
The TLV2221, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for high-impedance sources such as piezoelectric transducers. Because of the low power dissipation levels combined with 3-V operation, this device works well in hand-held monitoring and remote-sensing applications. In addition, the rail-to-rail output feature with single or split power supplies makes this device an excellent choice when interfacing directly to analog-to-digital converters (ADCs). All of these features combined with its temperature performance make the TLV2221 ideal for remote pressure sensors, temperature control, active voltage-resistive (VR) sensors, accelerometers, hand-held metering devices, and many other applications.
The device inputs and outputs are designed to withstand a 100-mA surge current without sustaining latch-up. In addition, internal ESD-protection circuits prevent functional failures up to 2000 V as tested under MIL-PRF-38535; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. Additional care should be exercised to prevent VDD+ supply-line transients under powered conditions. Transients of greater than 20 V can trigger the ESD-protection structure, inducing a low-impedance path to VDD-/GND. Should this condition occur, the sustained current supplied to the device must be limited to 100 mA or less. Failure to do so could result in a latched condition and device failure.
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