TLC2810Z, TLC2810Y LinCMOS^TM PRECISION DUAL OPERATIONAL AMPLIFIERS

SLOS120A - AUGUST 1993 - REVISED AUGUST 1994

features

• Trimmed Input Offset Voltage:
10 mV Max at 25°C, V_DD = 5 V
• Input Offset Voltage Drift Typically 0.1 uV/Month, Including the First 30 Days
• Wide Range of Supply Voltages Over Specified Temperature Range:
-40°C to 150°C . . . 4 V to 16 V
• Single-Supply Operation
• Common-Mode Input Voltage Range Extends to the Negative Rail
• Low Noise . . . 25 nV/Hz\ Typ at f = 1 kHz
• Output Voltage Range Includes Negative Rail
• High Input Impedance . . . 10¹² Typ
• ESD-Protection Circuitry
• Small-Outline Package Option Also Available in Tape and Reel
• Designed-In Latch-Up Immunity

LinCMOS is a trademark of Texas Instruments Incorporated.

description

The TLC2810Z dual operational amplifiers combine low offset voltage drift with high input impedance, low noise, and speeds approaching that of general-purpose JFET devices. In addition, the use of Texas Instruments silicon-gate LinCMOS technology assures offset stability that greatly exceeds the stability available with conventional metal-gate processes.

The high input impedance, low bias current, and high slew rate make the TLC2810Z ideal for applications that have previously been reserved for JFET and NFET products. These advantages, in combination with an upper operating temperature of 150°C, make the TLC2810Z an ideal choice for precision, extremely high-temperature applications.

In general, many features associated with bipolar technology are available on the TLC2810Z without the power penalties of bipolar technology. General applications such as transducer interfacing, analog calculations, amplifier blocks, active filters, and signal buffering are designed easily with the TLC2810Z.

The TLC2810Z package options include a small-outline version for high-density system applications.

The device inputs and outputs are designed to withstand -100-mA surge currents without sustaining latch-up at 25°C. The TLC2810Z incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2. However, care should be exercised in handling the TLC2810Z as exposure to ESD may result in the degradation of the device parametric performance. Additional care should be exercised to prevent V_DD supply line transients under power conditions. Transients of greater than 20 V can trigger the ESD-protection structure, inducing a low-impedance path to GND. Should this condition occur, the sustained current supplied to the device must be limited to 100 mA or less. Failure to do so can result in a latched condition and device failure.

The TLC2810Z is characterized for operation over the extended temperature range from -40°C to 150°C.

View more information about generic part numbers:TLC2810

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.

(c) Copyright 1998 Texas Instruments Incorporated. All rights reserved.
Trademarks, Important Notice!