TPIC1301 3-HALF H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY

SLIS037 - NOVEMBER 1994

features

Low r_DS(on) . . . 0.23 Typ
High Voltage Output . . . 60 V
Extended ESD Capability . . . 4000 V
Pulsed Current . . . 11.25 A Per Channel
Fast Commutation Speed

description

The TPIC1301 is a monolithic gate-protected power DMOS array that consists of six electrically isolated N-channel enhancement-mode DMOS transistors configured as three half H-bridges. Each transistor features integrated high-current zener diodes (Z_CX_{a and}Z_CX_b) to prevent gate damage in the event that an overstress condition occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body model of a 100-pF capacitor in series with a 1.5-k resistor.

The TPIC1301 is offered in a 24-pin wide-body surface-mount (DW) package and is characterized for operation over the case temperature range of -40°C to 125°C.

Title: 3-HALF H-BRIDGE GATE-PROTECTED POWER DMOS ARRAY
Product Family: POWERPLUS ARRAYS
Device Functionality: POWER PLUS ARRAY

View the complete PDF datasheet: slis037.pdf (216 K Bytes) (Requires Acrobat Reader 3.x)

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