



SLDS004B - D2720, MARCH 1983 - REVISED MAY 1990
[dagger]BIDFET - Bipolar, double-diffused, N-channel and P-channel MOS transistors on same chip. This is a patented process.
The SN65518 and SN75518 are monolithic BIDFET[dagger]
integrated circuits designed to drive a dot matrix or segmented vacuum fluorescent display.
Each device consists of a 32-bit shift register, 32 latches, and 32 output AND gates. Serial data is entered into the shift register on the low-to-high transition of CLOCK. While LATCH ENABLE is high, parallel data is transferred to the output buffers through a 32-bit latch. Data present in the latch during the high-to-low transition of LATCH ENABLE is latched. When STROBE is low, all Q outputs are enabled. When STROBE is high, all Q outputs are low.
Serial data output from the shift register may be used to cascade additional devices. This output is not affected by LATCH ENABLE or STROBE.
The SN65518 is characterized for operation from -40°C to 85°C. The SN75518 is characterized for operation from 0°C to 70°C.
View more information about generic part numbers:SN65518, SN75518
Go to the Engineering Design Center to locate information on other TI Semiconductor devices.



