SMJ28F010B 131072 BY 8-BIT FLASH MEMORY

SGMS738 - APRIL 1998

features

Organization . . . 131072 × 8-Bit Flash Memory
Pin Compatible With Existing 1M-bit EPROMs
High-Reliability MIL-PRF-38535 Processing
V_CC Tolerance ±10%
All Inputs/Outputs TTL Compatible
Maximum Access/Minimum Cycle Time
28F010B-12 120 ns '28F010B-15 150 ns '28F010B-20 200 ns
Industry-Standard Programming Algorithm
10000 Program/Erase-Cycle
Latchup Immunity of 250 mA on All Input and Output Lines
Low Power Dissipation (V_CC = 5.5 V) - Active Write...55 mW - Active Read...165 mW - Electrical Erase...82.5 mW - Standby...0.55 mW (CMOS-Input Levels)
Military Temperature Range - 55°C to 125°C

description

The SMJ28F010B is a 1048576-bit, programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 10000 program/erase-endurance-cycle version.

The SMJ28F010B flash memory is offered in a 32-lead ceramic 600-mil side-braze dual in-line package (DIP) (JDD suffix) and a leadless ceramic chip carrier (FE suffix).

Title: 8-BIT FLASH MEMORY
Product Family: FLASH
Device Functionality: 1M(128KX8), BULK ERASE
Orderable Devices: SMJ28F010B-12JDDM, SMJ28F010B-15JDDM, SMJ28F010B-20JDDM

View the complete PDF datasheet: sgms738.pdf (310 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:SMJ28F010B

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