SMJ416400 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY

SGMS042E - MARCH 1992 - REVISED MARCH 1996

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

Organization...4194304 × 4
Single 5-V Power Supply (10% Tolerance)
Performance Ranges:
Enhanced Page-Mode Operation for Faster Memory Access
CAS\-Before-RAS\ (CBR) Refresh
Long Refresh Period 4096 Cycles Refresh in 32 ms
3-State Unlatched Output
Low Power Dissipation
All Inputs, Outputs, and Clocks are TTL-Compatible
Operating Free-Air Temperature Range - 55°C to 125°C

description

The SMJ416400 series is a set of high-speed 16777216-bit dynamic random-access memories (DRAMs), organized as 4194304 words of four bits each. The series employs technology for high performance, reliability, and low power.

These devices feature maximum RAS\ access times of 70 ns, 80 ns, and 100 ns. All inputs, outputs, and clocks are compatible with series 54 TTL. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The SMJ416400 is offered in 450-mil 24/28-pin surface-mount small-outline leadless chip carrier (FNC suffix), 28-lead flatpack (HKB suffix), and 24-lead ZIP (SV suffix) packages. The packages are characterized for operation from -55°C to 125°C.

Title: 4194304 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
Product Family: DRAM
Device Functionality: 16M(4MX4),PAGE MODE
Orderable Devices: SM416400-80HKBM, SMJ416400-10FNCM, SMJ416400-70FNCM, SMJ416400-70HKBM, SMJ416400-70SVM, SMJ416400-80FNCM, SMJ416400-80HKBM, SMJ416400-80SVM

View the complete PDF datasheet: sgms042e.pdf (332 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:SMJ416400

Go to the Engineering Design Center to locate information on other TI Semiconductor devices.