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Data Sheet Abstract

SMJ44400 1 048 576 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY

SGMS041D - JANUARY 1991 - REVISED JUNE 1995


Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

features

description

The SMJ44400 is a series of 4194304-bit dynamic random-access memories (DRAMs), organized as 1048576 words of four bits each. This series employs state-of-the-art technology for high performance, reliability, and low-power operation.

The SMJ44400 features maximum row access times of 80 ns, 100 ns, and 120 ns. Maximum power dissipation is as low as 360 mW operating and 22 mW standby.

All inputs and outputs, including clocks, are compatible with Series 54 TTL. All addresses and data-in lines are latched on-chip to simplify system design. Data out is unlatched to allow greater system flexibility.

The SMJ44400 is offered in a 300-mil, 20-pin ceramic side-brazed dual-in-line package (JDB suffix), a 20-pin ceramic flatpack (HR suffix), a 20-pad 350 × 675 ceramic chip carrier (HL suffix), and a 20-pin ceramic zig-zag in-line package (SV suffix). All packages are characterized for operation from -55°C to 125°C.


Title: 1048576 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY
Product Family: DRAM
Device Functionality: 4M(1MX4),PAGE MODE
Orderable Devices: SM44400-10HRM, SMJ44400-10HLM, SMJ44400-10HRM, SMJ44400-10JDBM, SMJ44400-10JDM, SMJ44400-12HLM, SMJ44400-12HRM, SMJ44400-12JDBM, SMJ44400-12JDM, SMJ44400-80HLM, SMJ44400-80HRM, SMJ44400-80JDBM, SMJ44400-80JDM, SMJ44400-80SVM

View the complete PDF datasheet: sgms041d.pdf (311 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:SMJ44400

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