











SN64BCT2827C 10-BIT BUS/MOS MEMORY DRIVER WITH 3-STATE OUTPUTS
SCBS415 - APRIL 1987 - REVISED NOVEMBER 1993
features
- State-of-the-Art BiCMOS Design Significantly Reduces ICCZ
- ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
- Output Ports Have Equivalent 33-
Series Resistors, So No External Resistors Are Required - High-Impedance State During Power Up and Power Down
- 3-State Outputs Drive Bus Lines or Buffer-Memory Address Registers
- Flow-Through Architecture Optimizes PCB Layout
- Package Options Include Plastic Small-Outline (DW) Packages and Standard Plastic 300-mil DIPs (NT)
description
This 10-bit buffer and bus/MOS driver provides a high-performancebus interface for wide data paths or buses carrying parity.
The 3-state control gate is a 2-input AND gate with active-lowinputs so that if either output-enable ( or ) input is high, all ten outputsare in the high-impedance state. The outputs are also in thehigh-impedance state during power-up and power-down conditions. Theoutputs remain in the high-impedance state while the device ispowered down.
The outputs, which are designed to source or sink up to 12 mA,include 33-
seriesresistors to reduce overshoot and undershoot.
The SN64BCT2827C is characterized for operation from -40°C to85°C and 0°C to 70°C.
Title: 10-BIT BUS/MOS MEMORY DRIVER WITH 3-STATE OUTPUTS
Product Family: INVERTERS
Device Functionality: 10-BIT BUS/MOS MEMORY DRIVER WITH 3-STATE OUTPUTS
Orderable Devices: SN64BCT2827CDW, SN64BCT2827CNT
View the complete PDF datasheet: scbs415.pdf (67 K Bytes) (Requires Acrobat Reader 3.x)View more information about generic part numbers:SN64BCT2827C
Go to the Engineering Design Center to locate information on other TI Semiconductor devices.




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