SN74BCT2410 11-BIT MOS MEMORY DRIVER WITH 3-STATE OUTPUTS

SCBS119B - JUNE 1990 - REVISED NOVEMBER 1993

features

• State-of-the-Art BiCMOS Design Significantly Reduces I_CCZ
• ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
• Output Ports Have Equivalent 33- Series Resistors, So No External Resistors Are Required
• Packaged in Plastic Small-Outline (DW) Package

description

The SN74BCT2410 is a noninverting 11-bit buffer/line driverspecifically designed to drive MOS DRAMs of up to 4 megabits. It isalso suitable for use with wide data paths or buses carrying parity.The outputs, which are designed to source 1 mA and sink 12 mA,include 33- seriesresistors to reduce overshoot and undershoot.

The output-enable (and) inputs arerouted internally to a two-input AND gate with active-low inputs.When both and are low, the Y outputs are active(high or low logic level). When either or is high, the Y outputs are in the high-impedance state.

The multiple ground pins of the SN74BCT2410 reduce switching noisefor more reliable system operation.

The SN74BCT2410 is characterized for operation from 0°C to70°C.

View more information about generic part numbers:SN74BCT2410

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