SN54BCT2827C, SN74BCT2827C 10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS

SCBS007E - APRIL 1987 - REVISED NOVEMBER 1993

features

BiCMOS Design Substantially Reduces I_CCZ
Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
Specifically Designed to Drive MOS DRAMs
3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
Flow-Through Architecture Optimizes PCB Layout
Power-Up High-Impedance State
ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)

description

These 10-bit buffers and bus drivers are specifically designed todrive the capacitive input characteristics of MOS DRAMs. They providehigh-performance bus interface for wide data paths or buses carryingparity.

The 3-state control gate is a 2-input AND gate with active-lowinputs so if either output-enable ( or ) input ishigh, all ten outputs are in the high-impedance state. The outputsare also in the high-impedance state during power-up and power-downconditions. The outputs remain in the high-impedance state while thedevice is powered down.

The SN54BCT2827C is characterized for operation over the fullmilitary temperature range of -55°C to 125°C. TheSN74BCT2827C is characterized for operation from 0°C to70°C.

Title: 10-BIT BUS/MOS MEMORY DRIVERS WITH 3-STATE OUTPUTS
Product Family: NON INVERTERS
Device Functionality: 10-BIT BUS/MOS MEMORY DRIVER
Orderable Devices: SN74BCT2827CDW, SN74BCT2827CDWR, SN74BCT2827CNT

View the complete PDF datasheet: scbs007e.pdf (70 K Bytes) (Requires Acrobat Reader 3.x)

View more information about generic part numbers:SN74BCT2827C

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